Title:
COPPER WIRING AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3189767
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a highly pure copper thin film wiring and improve electric characteristics, by supplying a gas containing fluorine at the time of supplying a material, at least at a film forming initial stage in a CVD method, wherein an organic copper compound material having a group composed of carbon and fluorine is used as the material.
SOLUTION: A substrate 10 is held in a CVD chamber 20. The substrate 10 is provided by depositing silicon oxide on an Si substrate, forming a groove of a wiring pattern on a surface of an oxide film, and depositing a TiN film on the groove. The substrate 10 is held at a CVD temperature. At that time, the chamber 20 is evacuated by a pump 21. Then, a liquid material 22 is gasified into a material gas 11 in a gasifier 23 and is introduced into the chamber 20 with a carrier gas, i.e., hydrogen gas 24. At that time, the pressure inside the chamber 20 is adjusted to be, for example 1 Torr, by the pump 21. Further, hydrogen fluoride gas 12 is introduced into the chamber 20 by a separate line.
Inventors:
Kazuyoshi Ueno
Application Number:
JP30116397A
Publication Date:
July 16, 2001
Filing Date:
October 31, 1997
Export Citation:
Assignee:
NEC
International Classes:
C23C16/18; H01L21/28; H01L21/285; H01L21/3205; H01L23/52; (IPC1-7): H01L21/285; C23C16/18; H01L21/3205
Domestic Patent References:
| JP6232076A | ||||
| JP8288242A |
Attorney, Agent or Firm:
Opening Muneaki