Title:
大口径カーボンナノチューブ薄膜形成プラズマCVD装置及び該薄膜の形成方法
Document Type and Number:
Japanese Patent JP4448586
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a CVD system for large-diameter carbon nanotube thin film deposition, requiring no much labor having high production capacity of carbon nanotube and low electric power consumption and reduced in manufacturing cost, and a method of deposition for the thin film. SOLUTION: In the CVD system for carbon nanotube thin film deposition by means of microwave plasma enhanced chemical vapor deposition, a plurality of microwave generation systems are arranged in a row and the cavities of the systems are arranged right above the upper lid of the deposition chamber. A plurality of slits are provided to the bottoms of the cavities of the microwave generation systems and the microwave is passed through these slit and introduced into the deposition chamber via the quartz upper lid right under the cavities. The carbon nanotube thin film can be deposited by using this system.
Inventors:
Yoshiaki Agawa
Shojiro Takahashi
Yoshihiro Yamamoto
Hirokazu Yamaguchi
Masaaki Hirakawa
Hirohiko Murakami
Shojiro Takahashi
Yoshihiro Yamamoto
Hirokazu Yamaguchi
Masaaki Hirakawa
Hirohiko Murakami
Application Number:
JP2000000300A
Publication Date:
April 14, 2010
Filing Date:
January 05, 2000
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
C01B31/02; C23C16/26; C23C16/511; H01J9/02
Domestic Patent References:
| JP11011917A | ||||
| JP11193466A | ||||
| JP9227285A | ||||
| JP6216047A | ||||
| JP11214196A | ||||
| JP7065993A | ||||
| JP2225671A | ||||
| JP11176593A | ||||
| JP5082449A |
Attorney, Agent or Firm:
Yoshihiro Shimizu