To provide a laser anneal processing unit which can increase a margin of pulse energy density without increasing proper pulse energy density when annealing by irradiation with pulse laser light of a semiconductor film.
A laser anneal processing unit comprises a laser light source for outputting pulse laser light; an optical system for shaping and guiding the pulse laser light to a semiconductor film to be processed; and a stage for installing the semiconductor film to be irradiated with the pulse laser light. The pulse laser light irradiating the semiconductor film has a rising time from 10% of the maximum height to the maximum height in pulse energy density, of 35 nsec or less, and a falling time from the maximum height to 10% of the maximum height, of 80 nsec or more. Accordingly, a margin of the pulse energy density is increased without exceptional increase in the pulse energy density suitable for crystallization, and an excellent anneal processing is performed without lowering throughput.
CHUNG SUGHWAN
MACHIDA MASASHI
| JP2002541679A | 2002-12-03 | |||
| JPH09161264A | 1997-06-20 | |||
| JP2003273040A | 2003-09-26 | |||
| JP2002176006A | 2002-06-21 |