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Title:
LASER ANNEALING METHOD AND LASER ANNEAL DEVICE
Document Type and Number:
Japanese Patent JP2015115401
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a laser annealing method capable of raising the temperature of a substrate or a film formed thereon down to a desired depth, or of a desired internal region thereof.SOLUTION: In a laser annealing method performing heat treatment of a semiconductor substrate or a film formed thereon by irradiating with laser light, temperature distribution is controlled by controlling at least one of the relative distance between the semiconductor substrate or the film formed thereon and a shaping optical system, and the adjustment of beam diameter of the laser light in the shaping optical system, so as to exceed the change in laser light intensity according to the Lambert-Beer law, thereby focusing the laser light transparent for the semiconductor substrate or the film formed thereon at a desired position of the film.

Inventors:
MONOTANE TAKESHI
KAWASE YUSUKE
MINATO TADAKURO
TAKENO YOSHIMIZU
KANADA KAZUNORI
Application Number:
JP2013255175A
Publication Date:
June 22, 2015
Filing Date:
December 10, 2013
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/268; H01L21/265
Domestic Patent References:
JPH11224861A1999-08-17
JPS5844726A1983-03-15
JP2002141301A2002-05-17
JP2000077333A2000-03-14
JP2006351659A2006-12-28
JPS62274620A1987-11-28
JP2001289797A2001-10-19
JP2001276985A2001-10-09
JP2013138252A2013-07-11
JP2012134516A2012-07-12
JP2011204834A2011-10-13
JP2012524422A2012-10-11
Foreign References:
WO2012063342A12012-05-18
Attorney, Agent or Firm:
Michiharu Soga
Kajinami order
Kazuhiro Oyaku
Shunichi Ueda
Junichiro Yoshida
Satoshi Iino



 
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