Title:
レーザアニール方法、レーザアニール装置、およびＴＦＴ基板
Document Type and Number:
Japanese Patent JP7203417
Kind Code:
B2
Abstract:
A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.
Inventors:
Yang Eiho
Goto Jun
Mitsunobu Mizumura
Yoshihiro Shiwaku
Goto Jun
Mitsunobu Mizumura
Yoshihiro Shiwaku
Application Number:
JP2019015656A
Publication Date:
January 13, 2023
Filing Date:
January 31, 2019
Export Citation:
Assignee:
Buoy Technology Co., Ltd.
International Classes:
H01L21/20; H01L21/268; H01L21/336; H01L29/786
Domestic Patent References:
| JP2006165463A | ||||
| JP2008218493A | ||||
| JP2005347694A | ||||
| JP2006156676A | ||||
| JP2000260709A | ||||
| JP2014505348A | ||||
| JP2004063478A |
Attorney, Agent or Firm:
Patent Attorney Corporation Nissei International Patent Office