Title:
LASER TREATING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3535241
Kind Code:
B2
Abstract:
PURPOSE: To suppress the ridge of the surface of a semiconductor film by irradiating with a laser beam in vacuum of a specific value or less, and then irradiating with a laser beam of the energy density of a specific value.
CONSTITUTION: A substrate is set on a driver 40 in a chamber 42, and the chamber 42 is set to a vacuum state of 100Pa or less. The substrate is heated, and irradiated by first laser beam in this state. Thereafter, it is irradiated with second laser beam. The laser uses the same KrF excimer laser as the first time, and the energy density is set to 1.3 times as large as the first laser, and the other conditions are the same.
Inventors:
Kouzai, Takamasa
Chiyou, Kouyuu
Miyanaga, Shoji
Chiyou, Kouyuu
Miyanaga, Shoji
Application Number:
JP30982694A
Publication Date:
June 07, 2004
Filing Date:
November 18, 1994
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
SHARP CORP
SHARP CORP
International Classes:
H01L21/20; H01L21/268; H01L21/324; H01L21/336; H01L21/77; H01L29/786; (IPC1-7): H01L21/20; H01L21/268; H01L21/324