Title:
LATERAL TYPE TRANSISTOR
Document Type and Number:
Japanese Patent JPS57211774
Kind Code:
A
Abstract:
PURPOSE: To improve Early's effect by a method wherein a part of a collector electrode connected to a collector provided on the surface of a surface serving as the base of a lateral type transistor is extended to a base side and an inversion layer is generated on the surface.
CONSTITUTION: P type diffusion layers 2, 3 becoming a collector and an emitter are provided on the surface of an N type Si substrate 1 becoming the base (4 is a base contact section) of a lateral type transistor and a part of a collector electrode 6 is extended to a base side to form a P type inversion layer 8 on the surface and the extension of depletion layers 5a, 5b is provided within a fixed range. This can improve Early's effect of lateral type transistor.
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Inventors:
MATSUURA AKIRA
Application Number:
JP9668581A
Publication Date:
December 25, 1982
Filing Date:
June 24, 1981
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/73; H01L21/331; H01L29/72; (IPC1-7): H01L29/10