LAYER STRUCTURE OF MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND METHOD FOR STORING DATA TO MAGNETIC MEMORY ELEMENT

Title:

LAYER STRUCTURE OF MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND METHOD FOR STORING DATA TO MAGNETIC MEMORY ELEMENT

Document Type and Number:

Japanese Patent JP2023094193

Kind Code:

A

Abstract:

To provide a layer structure of a magnetic memory element with improved drive current required for a magnetic domain wall movement and controllability of the magnetic domain wall movement, and a magnetic memory element including the same.SOLUTION: A layer structure 9 of a magnetic memory element 10 includes a plurality of antiferromagnetic layers 1 and a boundary layer 2 that is arranged between a plurality of antiferromagnetic layers 1,1 and configures a magnetic domain wall. The thickness of the boundary layer 2 is 2.0 nanometers or less.SELECTED DRAWING: Figure 1

Inventors:

ONO TERUO

Application Number:

JP2021209519A

Publication Date:

July 05, 2023

Filing Date:

December 23, 2021

Export Citation:

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Assignee:

UNIV KYOTO

International Classes:

H01L29/82; H10B61/00; H10N50/10

Attorney, Agent or Firm:

Saegusa International Patent Office

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