Title:
LEAD (PB) ALLOY BRAZING MATERIAL FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58151037
Kind Code:
A
Abstract:
PURPOSE:To obtain a brazing material having better welding strength and wettability by forming composition of a Pb alloy brazing material for welding members with the class 1 or class 2 Sn and In in the particular percentage and remaining material consisting of Pb and inevitable impurity and by setting content of radio isotope used as an essential impurity and a number of count of the radio active alpha particle to particular value or less. CONSTITUTION:An amount of Sn and In included in a Pb alloy brazing material is set to 1-65wt% in order to obtain excellent wettability and rigid brazing strength. Moreover a Ag of 1-10wt% is added, when required, in order to further improve such performance. Other materials are Pb and essential impurity but as an inevitable impurity, a radio isotope such as U, Th is included. Accordingly, an amount of content is specified to a value below 50ppb and a number of count of radio active alpha particle is set to 0.5CPH/cm<2> or less.
Inventors:
HOSODA NAOYUKI
UCHIYAMA NAOKI
KAWANAKA RIYUUSUKE
UCHIYAMA NAOKI
KAWANAKA RIYUUSUKE
Application Number:
JP3267882A
Publication Date:
September 08, 1983
Filing Date:
March 02, 1982
Export Citation:
Assignee:
MITSUBISHI METAL CORP
MITSUBISHI ELECTRIC CORP
MITSUBISHI ELECTRIC CORP
International Classes:
C22C11/00; B23K35/26; C22C13/00; C22C28/00; H01L21/52; H01L21/58; H01L23/02; H01L23/10; H01L23/14; H01L23/488; (IPC1-7): B23K35/24; B23K35/26; C22C11/00; C22C13/00; C22C28/00
Domestic Patent References:
| JPS5734352A | 1982-02-24 |
Attorney, Agent or Firm:
Kazuo Tomita