To provide a high-intensity and a downsized light-emitting device.
The light-emitting device comprises an inverted square prismoid semiconductor light-emitting element 3, and a cavity substrate with the inverted square prismoid cavity in which the semiconductor light-emitting element 3 is inserted formed. The semiconductor light-emitting element 3 comprises a multilayer semiconductor layer 32 provided on an inverted square prismoid transparent base material 31 and on the lower surface 312 of the transparent base material 31. The upper surface 311 of the transparent base material 31 is a light output surface. The light-emitting device has a p-electrode layer 34 and an n-electrode layer 35 as a first reflecting layer and a second reflecting layer for reflecting the light from a light-emitting layer 322 provided on the lower surface 302 of the element and four element side surfaces 303 of the semiconductor light-emitting element 3 with the transparent base material 31 provided on only one surface of the multilayer semiconductor layer 32. This provides the high-intensity and the downsized semiconductor light-emitting element 3 and the light-emitting device.
NAGAI HIDEO
| JPH10341035A | 1998-12-22 | |||
| JP2002100758A | 2002-04-05 | |||
| JP2006080124A | 2006-03-23 | |||
| JPS5892751U | 1983-06-23 | |||
| JP2004103672A | 2004-04-02 |
Hiroki Naito
Daisuke Nagano