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Title:
LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2011054905
Kind Code:
A
Abstract:

To provide a light-emitting element made compatible in both a long life and a high emission efficiency of a multiple active layer type light-emitting element while maintaining an advantage of a low resistance of a conventional bulk type active layer in a light-emitting element accompanied by a growth of a GaP thick film.

A light-emitting element is manufactured by using a compound semiconductor substrate having a light emission layer formed of (AlxGa1-x)yIn1-yP (0<x<1, 0.4<y<0.6) having at least a p-type clad layer and at least three or more active layers and at least two or more barrier layers and an n-type clad layer where a band gap difference ΔE between the barrier layer and the active layer is larger than 0 eV and equal to or smaller than 0.35 eV.


Inventors:
SAKAI KENJI
ISHIZAKI JUNYA
IKEDA ATSUSHI
Application Number:
JP2009205052A
Publication Date:
March 17, 2011
Filing Date:
September 04, 2009
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK
International Classes:
H01L33/06
Domestic Patent References:
JPH0918078A1997-01-17
JPH06104534A1994-04-15
JPH05259571A1993-10-08
JPH0786637A1995-03-31
JP2010087270A2010-04-15
JP2010153496A2010-07-08
Attorney, Agent or Firm:
Mikio Yoshimiya



 
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