Title:
LIGHT EMITTING SEMICONDUCTOR DIODE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH04229689
Kind Code:
A
Abstract:
PURPOSE: To obtain a light-emitting semiconductor diode with 633nm emission wavelength equal to the wavelength of a He-Ne laser by successively providing a substrate, buffer layer, clad layer, and active layer, forming the buffer layer of AlGaAs, and allowing the Al content of the buffer layer to have minimum value belonging to the band gap of the active layer. CONSTITUTION: A semiconductor layer structural body, equipped with an n- InAlGaP clad layer 2, a InGaP active layer 3, and a p-InAlGaP clad layer 4 is provided on a substrate 1. Phosphorus atoms in those polytopic mixed crystals are on one sub-grid, and the residual element atoms are on the other sub-grid. Then, an AlGaAs buffer layer 11 is arranged between the substrate 1 and the clad layer 2, and the Al content of the buffer layer 11 is allowed to have at least the minimum value belonging to the band gap of the active layer 3. In this case, the band gap of the active layer 3 is about 1.92eV, and the minimum Al content of the buffer layer 11 is about 9 atom %.
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Inventors:
VALSTER ADRIAAN (NL)
LIEDENBAUM COEN T H F (NL)
LIEDENBAUM COEN T H F (NL)
Application Number:
JP14662891A
Publication Date:
August 19, 1992
Filing Date:
May 23, 1991
Export Citation:
Assignee:
KONINKL PHILIPS ELECTRONICS NV (NL)
International Classes:
H01L33/00; H01S5/00; H01L33/06; H01L33/30; H01S5/323; H01S5/343; H01S5/22; H01S5/32; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Akihide Sugimura (5 outside)