Title:
LINE TRANSFER TYPE PHOTOSENSOR
Document Type and Number:
Japanese Patent JPS6085560
Kind Code:
A
Abstract:
An improved line-transfer photosensitive device and particularly a device which operates with a double drive charge comprises on at least one semiconductor substrate a photosensitive region made up of M lines of N photosensitive points. The photosensitive points of the different lines are connected in parallel by means of conductive columns to a line memory which carries out at least the transfer of the signal charges integrated on any one line of the phtosensitive region to a read register consisting of a charge-coupled shift register of the volume transfer type. The line memory is formed on a semiconductor substrate region having an impurity implantation of opposite type with respect to the substrate in order to produce a volume charge transfer. The region in which the line memory is formed has a dopant concentration which is lower than or equal to that of the region in which the shift register is formed.
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Inventors:
JIYAN RIYUTSUKU BERUJIE
RUI BURISO
IBUON KAZOO
RUI BURISO
IBUON KAZOO
Application Number:
JP19045684A
Publication Date:
May 15, 1985
Filing Date:
September 11, 1984
Export Citation:
Assignee:
THOMSON CSF
International Classes:
H01L27/148; H01L27/146; H04N5/374; (IPC1-7): H01L27/14
Attorney, Agent or Firm:
Yoshio Kawaguchi
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