To prevent the peeling of Al electrodes and Al wiring by forming the plural transistors(TRs) of a driving circuit in a rectangular arrangement region and providing a sealing material on a triangular empty space generated by diagonally providing two pieces of the Al wiring disposed in parallel with both sides of the arrangement region with the arrangement region.

The driving circuit comprises the plural TRs. One or plurality of these TRs are formed in the rectangular arrangement region 100. The triangular empty space OS generated by disposing the arrangement region 100 diagonally with two pieces of the second wiring 104, 104 disposed in parallel with both sides of the arrangement region 100 is provided with the sealing material 30. Then, the empty space OS is formed by diagonally arranging the arrangement region 100 of the TRs, by which the adhesion property of the exposed Si nitrided film and the flattened film in this region is improved. This part OS is provided with the sealing material 30, by which the prevention of the peeling of the Al by the adhesiveness of the Si nitrided film in this part and the flattened film is made possible.