Title:
LIQUID HEATING TYPE ACTIVATED ANNEALING EQUIPMENT
Document Type and Number:
Japanese Patent JP3141320
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an annealing equipment which does not create change in composition of a compound or thermal diffusion of impurities by realizing heating in a short period of time in activated annealing of a compound semiconductor.
SOLUTION: For an ion-implanted wafer 5, an annealing equipment comprises a processing chamber 9 for giving an activated heat treatment of an implantation layer, a solution tank 1 having a heat medium 2 for giving heat to a wafer 5, and a descending wafer carrier 4 for immersing the mounted wafer 5 into the heat medium 2. As a heat medium, a high temperature solution having a large heat capacity such as B2O3 oxide or chloride such as KCL, NaCl or CaCl2 are used for performing the transmission of a large amount of heat energy to the wafer in a short time.
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Inventors:
Koji Kasai
Application Number:
JP8460596A
Publication Date:
March 05, 2001
Filing Date:
March 13, 1996
Export Citation:
Assignee:
Japan Radio Co., Ltd.
International Classes:
H01L21/324; H01L21/265; (IPC1-7): H01L21/324
Domestic Patent References:
| JP58151016A |