LIQUID PHASE EPITAXY DEVICE

Japanese Patent JPH01179786

A

PURPOSE:To eliminate leakage of a molten epitaxy material and to assure contact thereof with a substrate so that a stable high-grade epitaxial crystal is obtd. with a liquid phase epitaxy device by inserting and sealing a bottom blinded tube into which a specific supporting member installed with a substrate for epitaxy and the epitaxial material are previously inserted into an ampoule and epitaxially growing the crystal. CONSTITUTION:The substrate 4 for epitaxy laminated on a supporting plate 3 is inserted and installed into a groove 5 provided in a circular cylindrical recess 2 formed in the central part and the epitaxial material 8 is housed in the recess 2 of the supporting member 7 which is so constituted as to be bisected along the axial direction of the tube of the ampoule 1 at the center; thereafter, said member and material are inserted into the bottom blinded tube 11 which is previously so formed as to come into tight contact with the supporting member 7 with high accuracy. Such tube is inserted into the ampoule 1 which is blinded at one end and after the inside of the ampoule is evacuated, the other end is sealed. This ampoule 1 is then put into the core tube of a heating furnace and is heated to melt the epitaxial material 8. The ampoule 1 is rotated 180 deg. to bring the epitaxial material 8 into contact with the substrate 4 so that the epitaxial crystal is grown on the substrate 4.

YAMAMOTO TAMOTSU
ITO MICHIHARU
HIROTA KOJI
YAMAMOTO KOSAKU

JP97588A

July 17, 1989

January 05, 1988

Click for automatic bibliography generation  

FUJITSU LTD

H01L21/368; C30B19/06; (IPC1-7): C30B19/06; H01L21/368

Sadaichi Igita

Previous Patent: CRYSTAL GROWING DEVICE FOR LIQUID PHASE EPITAXY

Next Patent: ELECTROMAGNETIC WAVE-SHIELDING WINDOW MATERIAL