PURPOSE: To improve the control of a thin film and the quality of a crystal by supplying a current to a first growing solution to collapse thermal stability thereby to grow a first thin film layer, then moving a grown substrate under a second growing solution thermally stabilized in a saturated state, then growing a second thin film layer by the similar method, and repeating the above- mentioned process. repeating the above-mentioned process.

CONSTITUTION: A grown substrate 2 disposed on a slider 1 is first moved underneath a thermally stable InP growing solution 3. After the movement, a certain time is elapsed to be thermally stable, a current is supplied to a heater wire 5 to collapse the thermal stability, thereby obtaining a layer of desired thickness. Then, the substrate 2 is moved underneath a thermally stable InGaAs growing solution 4. After it is thermally stabilized, a current is supplied to a heater wire 6 to grow the InGaAs layer in a desired thickness. Thereafter, these steps are repeated to continuously grow a multilayered thin film layer. Thus, a crystal having excellent thin film controllability and high quality can be grown.