Title:
リソグラフィ組成物、レジストパターンの形成方法および半導体素子の製造方法
Document Type and Number:
Japanese Patent JP6766266
Kind Code:
B2
Abstract:
The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.
Inventors:
Yamamoto Kazuma
Ishii Maki
Tomoyasu Yashima
Tatsuro Nagahara
Ishii Maki
Tomoyasu Yashima
Tatsuro Nagahara
Application Number:
JP2019526307A
Publication Date:
October 07, 2020
Filing Date:
November 21, 2017
Export Citation:
Assignee:
Merck Patent GmbH
International Classes:
G03F7/32; G03F7/20; H01L21/027
Domestic Patent References:
| JP2012211949A | ||||
| JP2004078217A | ||||
| JP2012042531A |
Attorney, Agent or Firm:
Yukitaka Nakamura
Satoru Asakura
Hideaki Maekawa
Endo Ayako
Satoru Asakura
Hideaki Maekawa
Endo Ayako