To provide a low dielectric constant insulating material contributing to high-speed propagation of signals and suitable as a material of multilayer circuit wiring in an electronic component of a semiconductor device or the like.

The low dielectric constant insulating material is composed of a tetravalent or higher-valent atom, and at least two cyclic compounds that form a cyclic structure with the atom. Preferable embodiments are those in which the tetravalent or higher-valent atom is selected from the group consisting of carbon, silicon, nitrogen, and sulfur; the tetravalent or higher-valent atom is a spiro atom; the tetravalent or higher-valent atom is in an sp3 valence state; the cyclic compound has two benzene skeletons each including a carbon atom that is bonded to the tetravalent or higher-valent atom, wherein another carbon atom bonded to the carbon atom in one of the benzene rings is bonded to another carbon atom that is bonded to the carbon atom in the other benzene ring; at least either of an aromatic compound and an insulating resin is bonded to the cyclic compound; and at least either of the aromatic compound and the insulating resin is selected from the group consisting of a p-phenylene derivative and a silicone resin.