Title:
Low kV enhancement of focused ion beam
Document Type and Number:
Japanese Patent JP6341680
Kind Code:
B2
Abstract:
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
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Inventors:
Mostafa Marzous
Application Number:
JP2014023442A
Publication Date:
June 13, 2018
Filing Date:
February 10, 2014
Export Citation:
Assignee:
F-I-I Company
International Classes:
H01J37/317; H01J37/09; H01J37/147; H01J37/18; H01J37/28
Domestic Patent References:
| JP6017103U | ||||
| JP2000133185A |
Foreign References:
| US20070215802 |
Attorney, Agent or Firm:
Masahiko Amagai