Title:
低寄生キャパシタンス低雑音増幅器
Document Type and Number:
Japanese Patent JP7364557
Kind Code:
B2
Abstract:
A low noise amplifier (LNA) device includes a first transistor on a semiconductor on insulator (SOI) layer. The first transistor includes a source region, a drain region, and a gate. The LNA device also includes a first-side gate contact coupled to the gate. The LNA device further includes a second-side source contact coupled to the source region. The LNA device also includes a second-side drain contact coupled to the drain region.
Inventors:
Sinan Goktepeli
Application Number:
JP2020516404A
Publication Date:
October 18, 2023
Filing Date:
August 27, 2018
Export Citation:
Assignee:
Qualcomm, Inc.
International Classes:
H03F1/26; H01L21/3205; H01L21/336; H01L21/768; H01L21/822; H01L23/522; H01L27/04; H01L29/786; H04B1/40
Domestic Patent References:
| JP2014513417A | ||||
| JP8107186A |
Foreign References:
| US20150357477 | ||||
| US20070296002 | ||||
| US20180061766 |
Attorney, Agent or Firm:
Yasuhiko Murayama
Shinpei Kuroda
Shinpei Kuroda