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Title:
LOW REFLECTION THIN FILM SUBSTRATE
Document Type and Number:
Japanese Patent JPH09281305
Kind Code:
A
Abstract:

To obtain low reflectance for a wide wavelength range in the visible ray region compared to the characteristics of a substrate using a chromium base metal film and to flatten the spectral reflectance curve of the substrate in a wide range by forming a thin film having specified optical characteristics to obtain a low reflection thin film substrate.

This substrate has ≤0.1% min. reflectance and ≤2.0% max. reflectance and ≤0.3% average reflectance in the visible ray region and is produced by forming a thin film on a transparent glass substrate by sputtering. Namely, a transparent glass substrate is mounted to face a batch type reactive sputtering target, the device is evacuated, then argon gas and oxygen gas are introduced into the device for sputtering to form a first layer 1 of about 51nm thickness on the transparent glass substrate 4. Then argon gas and nitrogen gas are introduced for sputtering to form a second layer 2 on the first layer 1. Further, argon gas is introduced to form a third layer 3 on the second layer 2 to obtain a low reflection thin film substrate 5 having a three-layer structure.


Inventors:
SUZUKI TADAKATSU
Application Number:
JP9570896A
Publication Date:
October 31, 1997
Filing Date:
April 17, 1996
Export Citation:
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Assignee:
KURAMOTO SEISAKUSHO KK
International Classes:
G02B5/00; C23C14/34; G02B5/20; G02F1/1335; (IPC1-7): G02B5/00; C23C14/34; G02B5/20; G02F1/1335
Attorney, Agent or Firm:
西澤 利夫



 
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