To provide a process and a system for a magnetron sputtering by which a highly efficient film deposition can be realized at low temperature near to ordinary temperature by preventing the temperature of a base material from rising.
A magnet 1a at the rear of a target and a magnet 1b confronted therewith are set so as to repel each other by allowing the same pole to be confronted in such a manner that the magnetic field in the film depositing face is made zero with the film depositing face 12 in a base material 11 between, then the sputtering is performed. When the film deposition is performed to one side of the base material, the film depositing face 12 is located at a position slightly deflected to the side opposite to that of the target 5a than the face P at which the magnetic field is made zero. In the case film deposition is performed to both the sides of a sheet-shaped thin base material, targets are arranged on both the sides to sandwich the base material, and the pair of magnets 1a, 1b are arranged on the back thereof so as to repel each other. The number of high temperature secondary electrodes reaching the film depositing face 12 is extremely small, thus the increase of the temperature in the base material caused by the secondary electrodes can be suppressed.
O MASATOKI
KAWABATA WAKICHI
NIPPON NANOMAKU KK
DAICHI KK