Title:
METHOD FOR GROWING SINGLE CRYSTAL SiC
Document Type and Number:
Japanese Patent JP3043744
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To efficiently grow a high quality single crystal SiC which is free from the formation of powdery crystals and the occurrence of micro-pipe defects or the like by collision bonding of active atoms in the space of flight.
SOLUTION: The single crystal is grown on the surface of a SiC single crystal substrate 7 by ejecting a high temp. plasma jet flame PJ from a nozzle part 5 by cooling an inert Ar gas from the outside, which gas is supplied into an arc discharge area 3 generated by applying a direct current voltage between an anode 1 and a cathode 2 of a plasma thermal spraying gun, on the other hand, decomposing silicon and carbon raw materials at the high temp. arc discharge area 3, which raw materials are introduced into a center part of the cathode 2 or its neighboring part, then ejecting the formed active silicon and carbon atoms together with the plasma jet flame PJ with a speed near to the speed of sound, and keeping the SiC single crystal substrate 7 at a temp. of 800-2,500°C, which base plate is arranged in the ejected plasma jet flame PJ.
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Inventors:
Yamada, Masuzo
Yano, Kichiya
Maeda, Toshihisa
Hiramoto, Masanobu
Yano, Kichiya
Maeda, Toshihisa
Hiramoto, Masanobu
Application Number:
JP1999000071736
Publication Date:
March 10, 2000
Filing Date:
March 17, 1999
Export Citation:
Assignee:
NIPPON PILLAR PACKING CO LTD
International Classes:
C30B23/00; C30B29/36; (IPC1-7): C30B29/36
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