To provide a method for producing a Ga-containing nitride semiconductor with high productivity in which, by preventing the accompanying adhesion of a Ga-containing nitride to portions other than a substrate in a growth chamber of a vapor phase deposition apparatus, particularly the accompanying adhesion of the Ga-containing nitride when thick film formation is desired, various problems due to the adhesion is solved, without inhibiting the growth of the Ga-containing nitride semiconductor onto the substrate.
The method for producing a Ga-containing nitride semiconductor comprises supplying a first gas containing a gallium compound and a second gas containing a nitrogen compound into a growth chamber of a vapor phase deposition apparatus and growing the Ga-containing nitride semiconductor on a substrate disposed in the growth chamber, wherein during a period of supplying the first gas and the second gas into the growth chamber, a specific amount of a third gas containing HCl gas is supplied into the growth chamber from a supply port different from a supply port for supplying the first gas so that the average growth rate becomes not less than 66 μm/h.
NAGAOKA HIROFUMI
FUJIMURA ISAO
| JP2004323351A | 2004-11-18 |
| US20030013222A1 | 2003-01-16 |
Akihiko Yamashita
Noriyuki Yamamoto