Title:
METHOD OF TESTING SiC SUBSTRATE
Document Type and Number:
Japanese Patent JP2006286693
Kind Code:
A
Abstract:
To contribute to manufacture of a high-quality GaN-system HEMT, etc. by testing through holes such as micro pipes which occur in an SiC substrate by an easy means accurately and non-destructively.
A vacuum suction region 23 which includes nearly the center of the SiC substrate 21 and is surrounded by the circumference having a diameter which is half the diameter of the substrate is vacuum-sucked from the backside, and then water or a liquid having the same viscosity as water is applied from the surface side of the SiC substrate 21. Those which never allow the liquid to escape to the backside are selected as good SiC substrates.
Inventors:
YOSHIKAWA SHUNEI
Application Number:
JP2005100916A
Publication Date:
October 19, 2006
Filing Date:
March 31, 2005
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/66; G01N15/08; H01L21/338; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Manabe Kiyoshi
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito
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