Title:
酸化マグネシウム膜およびその成膜方法、ならびにプラズマ生成電極
Document Type and Number:
Japanese Patent JP5363918
Kind Code:
B2
Inventors:
Toshio Kiyokawa
Ryohei Minami
Hidetoshi Saito
Daiki Akasaka
Shigeo Oshio
Kuniyuki Matsuda
Ryohei Minami
Hidetoshi Saito
Daiki Akasaka
Shigeo Oshio
Kuniyuki Matsuda
Application Number:
JP2009199127A
Publication Date:
December 11, 2013
Filing Date:
August 31, 2009
Export Citation:
Assignee:
Air Water Inc.
Nagaoka University of Technology
Nagaoka University of Technology
International Classes:
H01J11/40; C23C16/40; H01J9/02; H01J11/22; H01J11/34
Domestic Patent References:
| JP7296718A | ||||
| JP10125237A | ||||
| JP2230633A | ||||
| JP2003253451A | ||||
| JP2004107686A | ||||
| JP2007239083A | ||||
| JP4363835A |
Other References:
河口晋之介、大塩茂夫、齋藤秀俊,“大気開放型CVD法によるMgO結晶膜の形態”,2004年春季第51回応用物理学関係連合講演会講演予稿集,日本,応用物理学会,2004年 3月28日,第2分冊,pp.651,(29a-ZA-11)
Attorney, Agent or Firm:
Shiro Yokozawa