Title:
酸化マグネシウム単結晶蒸着材及びその製造方法
Document Type and Number:
Japanese Patent JP4873340
Kind Code:
B2
Abstract:
This invention provides a single crystal MgO vapor deposition material for use as a target material for forming an MgO film on a substrate by a vacuum vapor deposition method such as an electron beam vapor deposition method. This vapor deposition material does not reduce a film formation speed during vapor deposition and, at the same time, can prevent the occurrence of splash, and has excellent film properties, for example, can improve, for example, discharge characteristics when used as a protective film for PDP. A magnesium oxide single crystal vapor deposition material is also provided in which the half value width of a rocking curve on a magnesium oxide (200) face is 0.005 to 0.025 degree. There is also provided a process for producing a magnesium oxide single crystal vapor deposition material comprising the step of disintegrating a magnesium oxide single crystal. In the disintegration step, a blade-type impactor is allowed to collide at an angle of -5 to +5 degrees to magnesium oxide (100) face orientation for cleavage.
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Inventors:
Atsushi Azuma
Kawaguchi Yoshifumi
Kunishige Masaaki
Kawaguchi Yoshifumi
Kunishige Masaaki
Application Number:
JP2005018033A
Publication Date:
February 08, 2012
Filing Date:
January 26, 2005
Export Citation:
Assignee:
Tateho Chemical Industries Co., Ltd.
International Classes:
C23C14/24; H01J9/02; H01J11/22; H01J11/34; H01J11/40
Domestic Patent References:
| JP2005187919A | ||||
| JP2004043955A | ||||
| JP10297956A |
Other References:
L. D. Madsen et al. ,Assessment of MgO(100) and (111) substrate quality by X-ray diffraction,J. Cryst. Growth,NL,Elsevier Science B. V. ,2000年11月 5日,Vol. 209,pp. 91-101
Attorney, Agent or Firm:
Hajime Tsukuni
Fumio Shinoda
Koshiro Tsukuda
Akio Shibata
Fumio Shinoda
Koshiro Tsukuda
Akio Shibata