Title:
磁気接合及びそれを含む磁気装置並びに磁気接合提供方法
Document Type and Number:
Japanese Patent JP7090060
Kind Code:
B2
Abstract:
A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The first and second ferromagnetic layers each contain at least one of Co and CoFe. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
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Inventors:
Lee Gin
Tangaku body
Tangaku body
Application Number:
JP2019219640A
Publication Date:
June 23, 2022
Filing Date:
December 04, 2019
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/8239; H01F10/14; H01F10/16; H01F10/30; H01L27/105; H01L29/82
Domestic Patent References:
| JP2012235015A | ||||
| JP2012059808A | ||||
| JP2012204688A |
Attorney, Agent or Firm:
Kyosei International Patent Office
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