Title:
磁気トンネル接合を有する磁気装置、メモリアレイ、及びこれらを用いた読み出し/書き込み方法
Document Type and Number:
Japanese Patent JP4777613
Kind Code:
B2
Abstract:
The magnetic random access memory (MRAM) comprises a storage layer (20a) which is heated beyond the magnetization blocking temperature. A further circuit element (26) is provided for applying a magnetic field to the storage layer. to orientate (34) the magnetization of this layer. The magnetic storage device comprises a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The magnetization blocking temperature of the storage layer is lower than that of the reference layer. A circuit (22,24) is provided for heating the storage layer beyond the magnetization blocking temperature. At the same time a further circuit element (26) is provided for applying a magnetic field to the storage layer. This has the effect of orientating (34) the magnetization of this layer relative to that of the reference layer, without modifying the orientation of the field of the reference layer.
Inventors:
Bernard Diene
Olivier Redon
Olivier Redon
Application Number:
JP2003544759A
Publication Date:
September 21, 2011
Filing Date:
November 14, 2002
Export Citation:
Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
International Classes:
H01F10/16; H01L21/8246; G11C11/15; H01F10/30; H01F10/32; H01L27/105; H01L27/22; H01L43/08; H01L43/10
Domestic Patent References:
| JP2003060173A | ||||
| JP2005503670A | ||||
| JP2000285668A |
Foreign References:
| WO2000079540A1 |
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro