Title:
MAGNETIC MEMORY CELL
Document Type and Number:
Japanese Patent JP2004235641
Kind Code:
A
Abstract:
To improve reliability of reading/writing operation in an MRAM (magnetic RAM) device having a memory cell array in which a defective memory cell exists.
The memory cell (50) includes a magnetic data storage layer (60), a magnetic reference layer (62), and an insulating layer (64) between the magnetic data storage layer (60) and the reference layer (62). A resistive layer (66) having a known electric resistance is positioned adjacent to the insulating layer (66).
Inventors:
BLOOMQUIST DARREL R
Application Number:
JP2004019355A
Publication Date:
August 19, 2004
Filing Date:
January 28, 2004
Export Citation:
Assignee:
HEWLETT PACKARD DEVELOPMENT CO
International Classes:
H01L27/105; H01L21/8246; H01L29/00; H01L43/08; H01L27/22; (IPC1-7): H01L27/105; H01L43/08
Attorney, Agent or Firm:
Satoshi Furuya
Takahiko Mizobe
Kiyoharu Nishiyama
Takahiko Mizobe
Kiyoharu Nishiyama