Title:
磁気メモリ
Document Type and Number:
Japanese Patent JP4797795
Kind Code:
B2
Abstract:
The direction of magnetization of a reading ferromagnetic material 5R forming a spin filter when reading is the same as that of a pinned layer 1. In this case, a torque that works on the spin of a free layer 3 due to a spin polarized current becomes "zero." When the element size is made small so as to improve the integration degree of the magnetic memory, according to the scaling law, the writing current can be made small. In the present invention, the resistance to the spin injection magnetization reversal due to a reading current is high, so that the magnitude of the writing current can be lowered.
Inventors:
Toru Oikawa
Application Number:
JP2006144530A
Publication Date:
October 19, 2011
Filing Date:
May 24, 2006
Export Citation:
Assignee:
tdk Corporation
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L43/08
Domestic Patent References:
| JP2006156477A | ||||
| JP2005116888A | ||||
| JP2006093578A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Hiroaki Aoki
Shiro Terasaki
Hiroaki Aoki