Title:
磁気メモリ
Document Type and Number:
Japanese Patent JP4982025
Kind Code:
B2
Abstract:
The object of the invention is the shielding of a magnetic memory against high external magnetic fields. The magnetic memory (1) comprises an array of magnetic memory elements (2), each memory element (3) including at least one layer of magnetic material (4). The operation of the magnetic memory elements (3) is based on a magnetoresistance effect. The memory (1) is protected against high external magnetic fields by a shielding layer (14), which has been split into regions (5) covering the memory elements (3). The magnetic memory (1) is not erased by high external magnetic fields because of a strong attenuation of the external magnetic field by the regions (5) of the shielding layer (14).
Inventors:
Rensaen Curse-Michelle H
Louis Rock Jacobs Jay M
Louis Rock Jacobs Jay M
Application Number:
JP2002508804A
Publication Date:
July 25, 2012
Filing Date:
May 16, 2001
Export Citation:
Assignee:
NXP B.V.
International Classes:
H01L27/105; G11C11/14; G11C11/15; G11C11/16; H01L21/8246; H01L43/08
Domestic Patent References:
| JP9204770A | ||||
| JP2000090658A | ||||
| JP11238377A |
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Takeshi Sekine
Takahashi
Hidetoshi Tachibana
Takeshi Sekine
Takahashi