To prevent a wiring from deteriorating by electromigration in an MRAM and to reduce the power consumption at signal writing.

The magnetic random access memory 1 has a storage cell 3 having a first magnetoresistive element 95, and a reference cell 5 having a second magnetoresistive element 96 and adjacent to the cell 3. Further, the memory 1 comprises a first writing word line 71 passing through a lower side of the first element 95, a second writing word line 77 passing through an upper side of the second element 96, and a common writing word line 74 passing between the first element 95 and the second element 96 for connecting the first word line 71 to the second word line 77.