To provide a magnetic reluctance memory with high selectivity.

The magnetic reluctance memory has a primary magnetic layer in which an orientation of a magnetic vector is fixed, a 2nd magnetic layer which is parallel to the primary magnetic layer, and in which the orientation of the magnetic vector can be reversed, and a non-magnetic layer which intervenes between the primary magnetic layer and the 2nd magnetic layer. In the 2nd magnetic layer, the ratio of a major axis to a short axis is not more than 2, the thickness is not more than 5nm, and the amount of saturation magnetization is not more than 800 emu/cm3. According to this invention, as having magnetic resistance property without kink, the magnetic reluctance memory with high selectivity can be embodied regardless of process capability.