To provide a magnetic storage device which can prevent increase in the switching magnetic field and can realize stable storage holding operation, even if an element becomes microminiaturized.
The magnetic storage device comprises a tunnel magnetoresistance effect element, having the junction including a recording layer which is formed of a ferromagnetic material in which the switching magnetic field changes with temperature, to change the magnetizing direction with external magnetic field, an insulation layer and a magnetized deposition layer formed of a ferromagnetic material, a temperature control layer laminated on the recording layer of the tunnel magnetoresistance effect element, and bit lines and digit lines which are allocated in the direction to cross with each other in order to give the current field for writing operation to the tunnel magnetoresistance effect element. When data is written to the tunnel magnetoresistance effect element, a current larger than that in the read operation is supplied.
COPYRIGHT: (C)2004,JPO
Yoshiaki Saito
Tomomasa Ueda
Hiroaki Yoda
Minoru Amano
Tatsuya Kishi
Katsuya Nishiyama
Yoshiaki Asao
Yoshihisa Iwata
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Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai