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Title:
磁気記憶装置
Document Type and Number:
Japanese Patent JP6970132
Kind Code:
B2
Abstract:
According to one embodiment, a magnetic memory device includes a conductive member, a first element portion, and a controller. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first element portion includes a first element, a first interconnect, and a first circuit. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first counter magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first counter magnetic layer and the first magnetic layer. The first interconnect is electrically connected to the first magnetic layer. The first circuit is electrically connected to the first interconnect. The first circuit includes a first switch, a first capacitance element, a first parallel switch, and a first parallel capacitance element.

Inventors:
Tomoaki Iguchi
Katsuhiko Koi
Naoji Shimomura
Hideyuki Sugiyama
Kazutaka Ikegami
Susumu Takeda
Satoshi Takaya
Shinobu Fujita
Hiroaki Yoda
Application Number:
JP2019036214A
Publication Date:
November 24, 2021
Filing Date:
February 28, 2019
Export Citation:
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Assignee:
Toshiba Corporation
International Classes:
G11C11/16; H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
JP201885155A
JP2004134057A
Attorney, Agent or Firm:
Masahiko Hinataji
Junichi Kozaki
Hiroshi Ichikawa
Tatsutetsu Shirai
Takato Uchida
Isao Takeuchi