MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY USING THE SAME

Title:

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY USING THE SAME

Document Type and Number:

Japanese Patent JP3515940

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To eliminate a defect than in the conventional magnetic tunnel junction(MTJ) element, magnetic poles are generated on both ends since a ferromagnetic layer which will serve as a memory layer is laterally magnetized and a demagnetizing filed caused by the magnetic poles generated on both ends becomes larger with the shrinkage of the element which is required for a higher density of a magnetic memory, eventually causing unstabilized magnetization of the memory layer.
SOLUTION: On the ferromagnetic layer 14 which will become the memory layer of the MTJ element 1, a closed magnetic path layer 15 is so formed that a central part may be separated from the ferromagnetic layer 14.

More Like This:

WO/2017/122497	SEMICONDUCTOR CIRCUIT, DRIVING METHOD, AND ELECTRONIC DEVICE
JP2013097832	SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
JP2005056557	METHOD, DEVICE, AND SYSTEM FOR ERASING AND WRITING MAGNETIC RANDOM ACCESS MEMORY

Inventors:

Michijima, Masashi
Hayashi, Hidekazu
Namikata, Ryoji

Application Number:

JP2000039168A

Publication Date:

April 05, 2004

Filing Date:

February 17, 2000

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SHARP CORP

International Classes:

G11C11/15; G01R33/09; G11B5/39; H01L21/8246; H01L27/105; H01L43/08; (IPC1-7): H01L43/08; G01R33/09; G11B5/39; H01L27/105

Attorney, Agent or Firm:

山崎宏（外５名）

Previous Patent: VIDEO IMAGE STRUCTURE EDIT DEVICE AND COMPUTER-READABLE RECORDING MEDIUM FOR RECORDING PROGRAM FOR E...

Next Patent: DIFFERENTIAL AMPLIFIER CIRCUIT