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Title:
MAGNETRON SPUTTERING APPARATUS AND THIN FILM MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2008163355
Kind Code:
A
Abstract:

To solve a problem during the film deposition by a magnetron sputtering apparatus that sputter particles deposited on a target grow to be a lump, and are separated from the target and dropped on a substrate as particles.

A magnetron sputtering apparatus 101 comprises a target 107, a substrate holder 103, a magnetic field former 111b, and a driving device 130b. The substrate holder 103 is arranged on the surface side of the target 107, and opposite to the target 107. The magnetic field former 111b is arranged on the back side of the target 107. The driving device 130b moves the magnetic field former 111b between the first position far from the target 107 and the second position close to the target. The magnetic field former 111b is arranged at the first position during the film deposition, and arranged at the second position during the cleaning of the target to form the magnetic field to remove the lump.


Inventors:
YASUJIMA SHIGEO
Application Number:
JP2006350601A
Publication Date:
July 17, 2008
Filing Date:
December 26, 2006
Export Citation:
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Assignee:
NEC ELECTRONICS CORP
International Classes:
C23C14/00
Domestic Patent References:
JPH04193949A1992-07-14
JPH09209141A1997-08-12
JPS62284070A1987-12-09
Attorney, Agent or Firm:
Minoru Kudo