Title:
MAIN BODY SWITCH TYPE SOI(SILICON-ON-INSULATOR) CIRCUIT AND METHOD OF FORMING THE SAME
Document Type and Number:
Japanese Patent JP3555861
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To increase the threshold voltage of an FET element after switched from a floating state to a biased state by changing a bulk CMOS element to an element within a silicon substrate on an insulator.
SOLUTION: A unit cell 1 includes an SOINMOS transistor 60, and its main body or an isolated SOI substrate region 62 is connected to main-body-device transistor switches 64 and 66. The switch 64 is connected to a reference signal 74. When operated by a control signal 80 applied to a gate 78, the switch 64 supplies the signal 74 to the main body 62 of the transistor 60. The main body 62 is connected to a reference signal 76 via a switch 66, and the switch 66 is operated by a control signal 84 supplied to a gate 80. In an active switching state, the threshold voltage level is low, and in a standby state, it is high.
Inventors:
Cloud louis burtin
John Joseph Ellis-Monahan
Eric Ray Hedberg
Terence Blackwell Hook
Jack Alan Mandelman
Edward Joseph Nowak
Wilbur David Pricer
Min Ho Tong
William Robert Tonty
John Joseph Ellis-Monahan
Eric Ray Hedberg
Terence Blackwell Hook
Jack Alan Mandelman
Edward Joseph Nowak
Wilbur David Pricer
Min Ho Tong
William Robert Tonty
Application Number:
JP2000116911A
Publication Date:
August 18, 2004
Filing Date:
April 18, 2000
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L27/04; H01L21/822; H01L21/8234; H01L21/8238; H01L27/08; H01L27/088; H01L27/092; H01L27/12; H01L29/786; H03K17/06; H03K19/00; H03K19/094; H03K19/0944; (IPC1-7): H01L21/8238; H01L27/08; H01L27/092; H01L27/12; H01L29/786; H03K19/0944
Domestic Patent References:
| JP3263369A | ||||
| JP9186565A | ||||
| JP8017183A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi
Yoshihiro City
Yoshihiro City