Title:
マンガン合金スパッタリングターゲットの製造方法
Document Type and Number:
Japanese Patent JP3973857
Kind Code:
B2
Abstract:
A manganese alloy sputtering target characterized in that oxygen is 1000ppm or less, sulfur is 200ppm or less and a forged texture is provided, the target having a single phase equiaxed grain structure with the crystal diameter being 500 microns or less, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.
Inventors:
Yuichiro Nakamura
Application Number:
JP2001167040A
Publication Date:
September 12, 2007
Filing Date:
June 01, 2001
Export Citation:
Assignee:
Nikko Metal Co., Ltd.
International Classes:
C22F1/02; C23C14/34; B21J5/02; B21J5/08; C22C5/02; C22C5/04; C22C22/00; C22F1/00; C22F1/16; C22F1/18; G11B5/39; G11B5/65; G11B5/851; H01L43/12
Domestic Patent References:
| JP11264070A | ||||
| JP63238268A | ||||
| JP61124566A | ||||
| JP2000239836A |
Foreign References:
| WO2000031316A1 | ||||
| US4131457 |
Attorney, Agent or Firm:
Isamu Ogoshi