Title:
MANUFACTURE OF ALUMINUM NITRIDE SUBSTRATE
Document Type and Number:
Japanese Patent JPH05190704
Kind Code:
A
Abstract:
PURPOSE: To manufacture an AlN substrate without baking unevenness or warps and high in heat conductivity by using a boron nitride as the heat equalizer of an electric furnace used for the baking of an aluminum nitride.
CONSTITUTION: A laminate, wherein eight layers of green sheets are stacked, is decreased in nitric current at 600°C. An AlN substrate consisting of this degreased substance is caught with heat-radiating plates 3 consisting of BN inside the heat equalizer 2, and in an nitric current, it is baked for six hours at 1800°C. Hereby, since temperature difference does not occur in the substrate during baking, an AlN substrate without unevenness or warps and high in heat conductivity can be manufactured.
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Inventors:
MAKIHARA HIROSHI
OISHI HITOSHI
KAMEHARA NOBUO
OISHI HITOSHI
KAMEHARA NOBUO
Application Number:
JP628492A
Publication Date:
July 30, 1993
Filing Date:
January 17, 1992
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L23/12; H01L23/15; (IPC1-7): H01L23/12; H01L23/15
Attorney, Agent or Firm:
Aoki Akira (2 outside)