Title:
MANUFACTURE OF AMORPHOUS SILICON PHOTODETECTOR
Document Type and Number:
Japanese Patent JPH0442976
Kind Code:
A
Abstract:
PURPOSE:To omit one step in steps of vacuum depositing by previously etching an amorphous silicon layer, then photoetching a metal film vacuum-deposited on the entire surface, and simultaneously forming individual rear surface electrodes and transparent front surface electrode. CONSTITUTION:A transparent electrode 2 is formed on a glass board 1. Then, an amorphous silicon layer 3 on which p-type layer, an i-type layer and an n-type layer are laminated, is formed on the electrode 2. Thereafter, the layer 3 is photoetched, and patterned to form amorphous silicon layers 3-1, 3-2, 3-3 corresponding to R, G, B. Then, a metal film 4 of nickel, silver, etc., is formed over the entire surface. Subsequently, the film 4 is photoetched, patterned, rear surface electrodes 4-1, 4-2, 4-3 are respectively formed on the layers 3-1, 3-2, 3-3, and a common electrode 5 is formed on the end of the electrode 2.
Inventors:
MACHIDA TOSHIHIRO
OKUNO TETSUHIRO
KANEIWA MINORU
TAKEDA YOSHIHIKO
YAMAMOTO YOSHIHIRO
OKUNO TETSUHIRO
KANEIWA MINORU
TAKEDA YOSHIHIKO
YAMAMOTO YOSHIHIRO
Application Number:
JP14948590A
Publication Date:
February 13, 1992
Filing Date:
June 06, 1990
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Fukushi Aihiko
Next Patent: JPH0442977