Title:
MANUFACTURE OF AMORPHOUS SILICON SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS58209170
Kind Code:
A
Abstract:
PURPOSE:To make the thickness of a thin Si layer uniform preventing an electric short-circuit from occurring by a method wherein, when a transparent conductive film and multiple amorphous Si layer with different conductive types are laminated on a transparent insulated substrate to produce a solar battery, while an Si layer of the first layer is preliminarily laminated with thickness thicker than the preferable film thickness and before laminating the second layer, the Si layer is formed into preferable thickness by means of etching. CONSTITUTION:A transparent insulated substrate 21 is coated with a transparent conductive film 22 to be formed into specified shape and a P type amorphous Si layer 231 around 500Angstrom thick is laminated on the film 22. Next the substrate 21 picked up out of a storage room to make the layer 23 thinner down to 50-100Angstrom by means of the chemical dry etching subject to the back pressure of 0.01 Torr and the selected applicable gas such as CF4 of 0.1 Torr and O2 of 0.08 Torr as well as the etching rate of 200Angstrom /min. Through these procedures, a thin layer may be formed positively and then an I type layer 232 of 5,000Angstrom thick and an N type layer 233 of 500Angstrom thick are laminated on the layer 231 and finally an ohmic electrode 24 may be provided as the uppermost layer.
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Inventors:
KATOU CHIHARU
HATAYAMA TAMOTSU
NOZAKI HIDETOSHI
HATAYAMA TAMOTSU
NOZAKI HIDETOSHI
Application Number:
JP9287582A
Publication Date:
December 06, 1983
Filing Date:
May 31, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L31/04; H01L31/0445; H01L31/06; H01L31/075; H01L31/18; H01L31/20; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Takehiko Suzue