Title:
MANUFACTURE OF AMORPHOUS SILICON
Document Type and Number:
Japanese Patent JPS60107824
Kind Code:
A
Abstract:
PURPOSE:To omit an etching process on the manufacture of a device by projecting laser beams only on reaching to a necessary position and selectively forming a film consisting of amorphous Si on a substrate. CONSTITUTION:The inside of a vessel 1 is evacuated, a substrate 8 is heated 7 at 200 deg.C and a reaction gas is introduced, and the flow rate of the gas is adjusted to keep pressure in the vessel at 0.5-1.5Torr. Laser beams A are reflected by a mirror 3 and reach to the surface of the substrate 8. The angle of rotation of the mirror 3 is selected properly because an optical axis B can be moved upward and downward and left and right in the mirror 3, and the operation of the revolution of the mirror and the intervals of ON-OFF of a laser the controlled by a computer and synchronized, thus projecting laser spots at regular pitches. When a CO2 laser at 100W is used and spots having 50-60mumphi are projected, the points of amorphous Si films having 60-80mumphi can be formed on the substrate through a laser CVD method, and can be disposed at pitches of approximately 100mum by the revolution of the mirror 3, and a fine pattern consisting of amorphous Si is obtained in two-dimensions.
More Like This:
| JPS612160 | PHOTORECEIVING MEMBER |
| JPH0756571 | [Title of Invention] Photoreceptive member |
| JPS61102725 | METHOD OF FORMING DEPOSITED FILM |
Inventors:
OOTAKE TSUTOMU
Application Number:
JP21686783A
Publication Date:
June 13, 1985
Filing Date:
November 17, 1983
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
H01L31/0248; H01L21/205; (IPC1-7): H01L21/263; H01L31/08
Attorney, Agent or Firm:
Top affairs