Title:
MANUFACTURE OF AMORPHOUS SOLAR CELL
Document Type and Number:
Japanese Patent JPS6132581
Kind Code:
A
Abstract:
PURPOSE:To obtain a p type a-Si:H film having Eopt exceeding 1.9eV without introducing an element, such as carbon, nitrogen, oxygen or the like by using disilane and a p type doping gas as raw materials, applying a specific quantity of glow discharge energy and forming a p type silicon film. CONSTITUTION:Disilane and a p type doping gas are employed as raw materials, glow discharge energy of 40kJ/g-Si2H6 or less per disilane unit mass is applied, and a thin-film consisting of p type amorphous silicon is shaped onto a substrate with an electrode through glow discharge. Accordingly, hydrocarbon as a raw material for forming a substance such as a-SiCx need not be used, thus eliminating the trouble of the removal of carbon into a glow discharge chamber. Since hydrocarbon can be removed from raw material gases, the complicatedness of the control of raw materials is eliminated while the composition ratio of Si to C need not be controlled in order to control Eopt and conductivity, thus forming a window material only by employing disilane as the raw material.
Inventors:
FUKUDA NOBUHIRO
Application Number:
JP15312984A
Publication Date:
February 15, 1986
Filing Date:
July 25, 1984
Export Citation:
Assignee:
AGENCY IND SCIENCE TECHN
International Classes:
H01L31/04; C23C16/24; C23C16/50; H01L21/20; H01L21/205; H01L31/20; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS59126680A | 1984-07-21 | |||
| JPS59161079A | 1984-09-11 |
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