Title:
MANUFACTURE APPARATUS FOR SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS5850737
Kind Code:
A
Abstract:
PURPOSE:To suppress the generation of a semiconductor substrate defect caused by dust by making all the processes within a single container without being subjected to the outside air. CONSTITUTION:For the formation of an Si nitride film or an oxid film, nitrogen or oxygen is first injected into a substrate accommodation room 1c from a gas supplying apparatus 21, then the following methods are used: an electron beam from an electron beam source 2 is radiated via an electric-field lens 4, a magnetic-field lens 5 and an electric charge deflection means 6 to scan a substrate 100 to be processed; a plasma from plasma forming electrodes 22 is used; a laser beam from a laser oscillator 11 is radiated via a half mirror 13 driven by a mirror control means 15 to scan the substrate. For the formation of an impurity diffusion layer an impurity ion beam is radiated from an ion beam source 3, and for annealing an electron beam or a laser beam is radiated. Also, noncontact monitoring can be made with an inspecting apparatus 23.
Inventors:
FUKUMOTO HAYAAKI
ARIMA HIDEAKI
NISHIMURA TADASHI
YONEDA MASAHIRO
ARIMA HIDEAKI
NISHIMURA TADASHI
YONEDA MASAHIRO
Application Number:
JP15024481A
Publication Date:
March 25, 1983
Filing Date:
September 21, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01R31/302; H01L21/205; H01L21/22; H01L21/26; H01L21/66; H01L21/263; H01L21/265; H01L21/268; H01L21/302; H01L21/3065; (IPC1-7): H01L21/02; H01L21/302; H01L21/324; H01L21/66
Domestic Patent References:
| JPS5679438A | 1981-06-30 | |||
| JPS54162452A | 1979-12-24 | |||
| JPS5638464A | 1981-04-13 | |||
| JPS51140560A | 1976-12-03 |
Attorney, Agent or Firm:
Masuo Oiwa