Title:
MANUFACTURE OF FERROELECTRIC FILM AND FERROELECTRIC ELEMENT
Document Type and Number:
Japanese Patent JP3688490
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a high-quality ferroelectrics by film-forming a ferroelectrics on a base body surface after a rough is formed on the base board surface.
SOLUTION: On a silicon substrate 1, a silicon oxide film 2, a Ti film 3, over it, for improved adhesion, and a lower part electrode Pt film 4 are formed. The lower part electrode Pt film 4 is provided with a dent-like ruggedness, forming an MFM capacitor. With a base material substrate provide with a rough, which is used as a center for nucleus generation, an even nucleus generation is forced. Thus, a tight film of constant particle size with less drain boundary is formed, while effects such as increase in particle size and higher orientation are provided, improving a ferroelectric characteristics. The interference of a ferroelectric film 5 parallel to a base boy surface is relaxed to form a ferroelectric film 5 with less distortion, so degradation in ferroelectric characteristics due to polarity inversion obstruction caused by in-film distortion is reduced.
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Inventors:
Masato Koyama
Go Yamaguchi
Shinichi Takagi
Akira Toriumi
Go Yamaguchi
Shinichi Takagi
Akira Toriumi
Application Number:
JP392899A
Publication Date:
August 31, 2005
Filing Date:
January 11, 1999
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8247; C23C16/40; H01L21/822; H01L21/8242; H01L21/8246; H01L27/04; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L21/822; H01L21/8242; H01L27/04; H01L27/105; H01L27/108; H01L29/788; H01L29/792
Domestic Patent References:
| JP10189909A | ||||
| JP7074324A | ||||
| JP11233386A |
Attorney, Agent or Firm:
Hiroshi Horiguchi