Title:
MANUFACTURE OF FIELD EMISSION TYPE ELECTRON SOURCE, FIELD EMISSION TYPE ELECTRON SOURCE, PLANAR LIGHT EMISSION DEVICE, AND DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP3084280
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission type electron source capable of enhancing the pattern precision of an electron emission area at low cost.
SOLUTION: A silicon oxide layer 4 is formed on a polysilicon layer 3 in a step (b), and the patterning of the silicon oxide layer 4 is carried out in a step (c). In a step (d), a porous polysilicon layer 5 is formed by performing positive electrode oxidation processing with a constant current while performing light irradiation on the exposed polysilicon layer 3 by using the silicon oxide layer 4 as a mask material layer, and by using an electrolytic solution that is prepared by mixing 55 wt.% of hydrogen fluoride aqueous solution and ethanol with a ratio of 1:1, and cooled at 0°C. In a step (e), a thermally oxidized porous polysilicon layer 6 is formed by oxidizing the porous polysilicon layer 5 by a rapid thermal oxidation method. In a step (f), a metal thin film 7 that is a conductive thin film is formed on the front surface and the inside surface of the silicon oxide layer 4 and the front surface of the thermally oxidized porous polysilicon layer 6 by a deposition method through the use of a metal mask.
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Inventors:
Takashi Hatai
Takuya Komoda
Koichi Aizawa
Yoshiaki Honda
Takuya Komoda
Koichi Aizawa
Yoshiaki Honda
Application Number:
JP23906599A
Publication Date:
September 04, 2000
Filing Date:
August 26, 1999
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS,LTD.
International Classes:
H01J9/02; H01J1/304; H01J1/312; H01J29/04; H01J31/12; (IPC1-7): H01J9/02; H01J1/312; H01J29/04; H01J31/12
Domestic Patent References:
| JP9259795A | ||||
| JP8274375A | ||||
| JP10256225A | ||||
| JP9213209A |
Attorney, Agent or Firm:
Keisei Nishikawa (1 person outside)