PURPOSE: To form a complete crystal surface layer part on the surface of a semiconductor wafer, and reduce deterioration of withstand voltage, by planishing the surface of a semiconductor wafer to form a mirror wafer, and growing crystal of the same material as the semiconductor wafer on the surface or implanting elements of the same material.
CONSTITUTION: A semiconductor wafer is cut out from a columnar silicon ingot. If necessary, the surface is cleaned by beveling and etching, and then the wafer surface is planished. After mirror finish is completed, an Si epitaxial layer E which is the same material as the semiconductor wafer W is formed on the surface of the semiconductor wafer W. By forming the epitaxial layer E on the surface of the semiconductor wafer W in this manner, a complete crystal surface layer part F of high completeness is formed on the surface of the semiconductor wafer W.
SUGINO YUSHI
YAMADA EIICHI
KITANO MANABU
